Mapasha, Refilwe EdwinIgumbor, EmmanuelAndriambelaza, Noeliarinala FelanaChetty, Nithaya2019-10-112019-10-112019-11Mapasha, R.E., Igumbor, E., Andriambelaza, N.F. et al. 2019, 'Electronic properties of vacancies in bilayer graphane', Physica B: Condensed Matter, vol. 573, pp. 67-71.0921-4526 (print)1873-2135 (online)10.1016/j.physb.2019.08.025http://hdl.handle.net/2263/71786Please read abstract in the article.en© 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 573, pp. 67-71, 2019. doi : 10.1016/j.physb.2019.08.025.CalculationsDangling bondsDensity functional theory (DFT)DiamondsDiamond-like bilayer graphaneElectronic charactersElectronic structureEnergy gapMagnetic momentsVacanciesNeutral stateInduced magnetic momentsElectron ejectionCharge stateBi-layerAb initioElectronic properties of vacancies in bilayer graphanePreprint Article