Auret, Francois DanieJanse van Rensburg, Pieter JohanHayes, M.Nel, Jacqueline MargotCoelho, Sergio M.M.Meyer, Walter ErnstDecoster, S.Matias, V.S.Vantomme, A.Smeets, D.2007-07-162007-07-162007-04Auret, FD, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Coelho, S, Meyer, WE, Decoster, S, Matias, V, Vantomme, A & Smeets, D 2007, ‘Electrical characterization of defects in heavy-ion implanted n-type Ge’, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol.257, issues 1-2, pp. 169-171.[http://www.sciencedirect.com/science/journal/0168583X]0168-583X10.1016/j.nimb.2007.01.107http://hdl.handle.net/2263/3017Please open article to read abstract146462 bytesapplication/pdfenElsevierImplantationElectronic defectsGermanium -- DefectsIon implantationHeavy ionsDeep level transient spectroscopyPostprint Article