Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Igumbor, EmmanuelOlaniyan, OkikiolaMapasha, Refilwe EdwinDanga, Helga TariroOmotoso, EzekielMeyer, Walter Ernst2018-05-082018-04Igumbor, E., Olaniyan, O., Mapasha, R.E. et al 2018, 'Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC', Journal of Physics: Condensed Matter, vol. 30, no. 18, pp. 1-9.0953-8984 (print)1361-648X (online)10.1088/1361-648X/aab819http://hdl.handle.net/2263/64786Please read abstract in the article.en© 2018 IOP Publishing Ltd.GeBoronDefectsSiliconDielectric propertiesAb InitioAugmented wave methodDensity functional theory (DFT)ComplexesCharge stateFormation energyElectrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiCPostprint Article