Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range

Njoroge, Eric GitauHlatshwayo, Thulani ThokozaniMokgadi, Thapelo FreddyThabethe, Thabsile TheodoraSkuratov, Vladimir Alexeevich2024-02-222024-02-222023-08Njoroge, E., Hlatshwayo, T., Mokgadi, T. et al. 2023, 'Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range', Materials Today Communications, vol. 36, art. 106631, pp. 1-10, doi : 10.1016/j.mtcomm.2023.106631.2352-4928 (online)10.1016/j.mtcomm.2023.106631http://hdl.handle.net/2263/94814DATA AVAILABILITY : Data will be made available on request.Please read abstract in the article.en© 2023 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license.IridiumSilicidesSilicon carbideRutherford backscattering spectrometry (RBS)Grazing incidence X-ray diffraction (GIXRD)Scanning electron microscopy (SEM)Raman spectroscopySolid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature rangeArticle