Mabakachaba, B.M.Madiba, I.G.Kennedy, J.Kaviyarasu, K.Ngoupe, P.Khanyile, B.S.Janse van Rensburg, JohanEzema, F.Arendse, C.J.Maaza, M.2021-11-092021-11-092020-09Mabakachaba, B.M., Madiba, I.G., Kennedy, J. et al. 2020, 'Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation', Surfaces and Interfaces, vol. 20, art. 100590, pp. 1-6.2468-0230 (online)10.1016/j.surfin.2020.100590http://hdl.handle.net/2263/82612Please abstract in the article.en© 2020 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Surfaces and Interfaces. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Surfaces and Interfaces, vol. 20, art. 100590, pp. 1-6, 2020. doi : 10.1016/j.surfin.2020.100590.Mg-implatedVanadium dioxideIon implantationFluenceTransition phaseElectrical propertiesThin flimSIMNRARutherford backscattering spectroscopy (RBS)Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantationPostprint Article