Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing

Mabelane, T.S.Abdalla, Zaki Adam YousifSkuratov, V.A.Ntshangase, S.S.Masikane, S.C.Hlatshwayo, Thulani Thokozani2025-04-222025-04-222025-05Mabelane, T.S., Abdalla, Z.A.Y., Skuratov, V.A. et al. 2025, 'Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing', Surfaces and Interfaces, vol. 64, art. 106376, pp. 1-11, doi : 10.1016/j.surfin.2025.106376.2468-0230 (online)10.1016/j.surfin.2025.106376http://hdl.handle.net/2263/102175DATA AVAILABILITY : Data will be made available on request.Please read abstract in the article.en© 2025 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC license (http://creativecommons.org/licenses/by- nc/4.0/).Swift heavy ion (SHI)Silicon carbide (SiC)SeleniumAnnealingRecrystallizationSDG-07: Affordable and clean energyEffect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealingArticle