Igumbor, EmmanuelDanga, Helga TariroOmotoso, EzekielMeyer, Walter Ernst2019-06-262019-03Igumbor, E., Danga, H.T., Omotoso, E. et al. 2019, 'Defect levels induced by double substitution of B and N in 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46.0168-583X (print)1872-9584 (online)10.1016/j.nimb.2019.01.014http://hdl.handle.net/2263/70300Please read abstract in the article.en© 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46, 2019. doi : 10.1016/j.nimb.2019.01.014.Charge stateDefectUranium compoundsSubstitutional impuritiesHybrid functionalFormation energySubstitutionEquilibrium conditionsElectrically active defectsDouble substitutionConduction-band minimumSubstitution reactionsSilicon compoundsSilicon carbideEnergy gapPostprint Article