Theron, C.C. (Chris)Mokoena, N.Ndwandwe, O.M.2010-01-252010-01-252009-11Theron, C, Mokoena, N & Ndwandwe, OM 2009, 'Solid-state compound phase formation of TiSi2 thin films under stress', South African Journal of Science, vol. 105, no. 11, pp. 440-444. [http://www.sajs.co.za/]0038-2353http://hdl.handle.net/2263/12721Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.enAcademy of Science of South AfricaStressReal-time Rutherford backscattering spectrometryPhase formationTiSi2Thin filmsDiffusionSolid state chemistryArticle