Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois DanieMeyer, Walter ErnstJanse van Rensburg, Pieter JohanHayes, M.Nel, Jacqueline MargotVon Wenckstern, HolgerSchmidt, H.Biehne, G.Hochmuth, H.Lorenz, M.Grundmann, Marius2008-06-052008-06-052007-12Auret, FD, Meyer, WE, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Von Wenckstern, H, Schmidt, H, Biehne, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, 'Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band', Physica B : Condensed Matter, vol. 401-402, pp. 378-381.10.1016/j.physb.2007.08.1920921-4526http://hdl.handle.net/2263/5815Please refer to abstract in article265167 bytesapplication/pdfenElsevierZnOHigh resolution Laplace DLTSDefectsSemiconductorsDeep level transient spectroscopyZinc oxidePulsed laser depositionElectronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction bandArticle