Gora, Valentine ElifasAuret, Francois DanieDanga, Helga TariroTunhuma, Shandirai MalvenNyamhere, CloudIgumbor, EmmanuelChawanda, Albert2020-06-052019-08Gora, V.E., Auret, F.D., Danga, H.T. et al. 2019, 'Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range', Materials Science and Engineering: B, vol. 247, art. 114370, pp. 1-5.0921-5107 (print)1873-1944 (online)10.1016/j.mseb.2019.06.001http://hdl.handle.net/2263/74880Please read abstract in the article.en© 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science and Engineering: B. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science and Engineering: B, vol. 247, art. 114370, pp. 1-5, 2019. doi : 10.1016/j.mseb.2019.06.001.Barrier heightRichardson constant4H-SiCBarrier height inhomogeneitiesSchottky Barrier heightPostprint Article