Stability, electronic and defect levels induced by substitution of Al and P pair in 4H

Igumbor, E.Dongho-Nguimdo, G.M.Mapasha, Refilwe EdwinOmotoso, E.Meyer, Walter Ernst2021-11-242021-11-242020-07Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. 2020, 'Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC', Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6.0022-3697 (print)1879-2553 (online)10.1016/j.jpcs.2020.109448http://hdl.handle.net/2263/82814Please read the abstract in the article.en© 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Journal of Physics and Chemistry of Solids. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6, 2020. doi : 10.1016/j.jpcs.2020.109448.DefectFormation energyCharge stateSubstitution pairStability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiCPostprint Article