Nyamhere, CloudDeenapanray, P.N.K.Auret, Francois DanieFarlow, F.C.2007-05-102007-05-102006Nyamhere, C, Deenapanray, PNK, Auret, FD & Farlow, FC 2006. ‘Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS’, Physica B: Condensed Matter, vols. 376-377, pp. 161-164 [http://www.sciencedirect.com/science/journal/09214526 ]0921-452610.1016/j.physb.2005.12.043http://hdl.handle.net/2263/2342We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.121686 bytesapplication/pdfenElsevierGallium dopingCzochralski SiDefectsLaplace DLTSGalliumPostprint Article