Hayes, M.Schroeter, A.Wendler, E.Wesch, W.Auret, Francois DanieNel, Jacqueline Margot2009-11-112009-11-112009M.Hayes, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.02110.1016/j.physb.2009.09.0210921-4526http://hdl.handle.net/2263/11794Read abstract in article.enElsevierImplantationRBSChannellingGeIons -- DefectsDamage formation in Ge during Ar+ and He+ implantation at 15 KPostprint Article