Ngoepe, Phuti Ngako MahlokaMeyer, Walter ErnstDiale, M. (Mmantsae Moche)Auret, Francois DanieVan Schalkwyk, Louwrens2012-06-122012-06-122012-06P.N.M. Ngoepe, W.E. Meyer, M. Diale, F.D. Auret, L.van Schalkwyk, Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures, Physica B, vol. 407, no. 10, pp. 1628-1630 (2012), doi: 10.1016/j.physb.2011.09.1020921-4526 (print)1873-2135 (online)10.1016/j.physb.2011.09.102http://hdl.handle.net/2263/19144Please read abstract in the article.en© 2011 Elsevier B.V. All rights reserved.AnnealingSchottky photodiodesAlGaNPhotodiodesOptoelectronicsOptoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperaturesPostprint Article