Mthalane, S.Abdelbagi, H.A.A.Mtshali, C.B.Li, B.S.Skuratov, V.A.Ntshangase, S.S.Hlatshwayo, Thulani Thokozani2025-04-222025-08Mthalane, S., Abdelbagi, H.A.A., Mtshali, C.B. et al. 2025, 'Selenium migration and SiC structural evolution post helium and selenium co-implantation and annealing', Vacuum, vol. 238, art. 114322, pp. 1-11, doi : 10.1016/j.vacuum.2025.114322.0042-207X (print)1879-2715 (online)10.1016/j.vacuum.2025.114322http://hdl.handle.net/2263/102177DATA AVAILABILITY : Data will be made available on request.Please read abstract in the article.en© 2025 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. Notice : this is the author’s version of a work that was accepted for publication in Vacuum. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Vacuum, vol. 238, art. 114322, pp. 1-11, 2025, doi : 10.1016/j.vacuum.2025.114322.Silicon carbide (SiC)SeleniumTransmission electron microscopy (TEM)Rutherford backscattering spectrometry (RBS)Co-implantationHe-bubblesRecrystallizationHelium (He)SDG-07: Affordable and clean energyPostprint Article