Friedland, Erich Karl HelmuthHlatshwayo, Thulani ThokozaniVan der Berg, Nic (Nicolaas George)Mabena, Chemist Mfanufikile2015-06-252015-06-252015-07Friedland, E, Hlatshwayo, TT, Van Der Berg, NG & Mabena, MC 2015, 'Influence of radiation damage on krypton diffusion in silicon carbide', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 354, pp. 42-46.0168-583X (print)1872-9584 (online)10.1016/j.nimb.2014.11.011http://hdl.handle.net/2263/45777Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for chemically active elements. For this purpose 360 keV krypton ions were implanted in commercial 6H-SiC and CVD-SiC wafers at room temperature, 350 °C and 600 °C. Width broadening of the implantation profiles and krypton retention during isochronal and isothermal annealing up to temperatures of 1400 °C was determined by RBS-analysis, whilst in the case of 6H-SiC damage profiles were simultaneously obtained by α- particle channelling. Little diffusion and no krypton loss was detected in the initially amorphized and eventually recrystallized surface layer of cold implanted 6H-SiC during annealing up to 1200 °C. Above that temperature thermal etching of the implanted surface became increasingly important. No diffusion or krypton loss is detected in the hot implanted 6H-SiC samples during annealing up to 1400 °C. Radiation damage dependent grain boundary diffusion is observed at 1300 C in CVD-SiC. The results seem to indicate, that the chemically inert noble gas atoms do not form defect-impurity complexes, which strongly influence the diffusion behaviour of other diffusors in silicon carbide.en© 2014 Published by Elsevier B.V. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 354, pp. 42-46, 2015. doi : 10.1016/j.nimb.2014.11.011Silicon carbideDiffusionRadiation damagePostprint Article