Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, CloudDas, A.G.M.Auret, Francois DanieChawanda, AlbertMtangi, WilbertOdendaal, R.Q. (Quintin)Carr, Alan2009-10-282009-10-282009C.Nyamhere, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.0370921-452610.1016/j.physb.2009.09.037http://hdl.handle.net/2263/11608Please read abstract in articleenElsevierLaplace DLTSDLTSDefectsDeep level transient spectroscopyLaplace transformationSputtering (Physics)GermaniumCharacterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)Postprint Article