Igumbor, E.Dongho-Nguimdo, G.M.Mapasha, Refilwe EdwinMeyer, Walter Ernst2019-06-252019-08Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge. Journal of Materials Science (2019) 54: 10798-10808. https://doi.org/10.1007/s10853-019-03627-0.0022-2461 (print)1573-4803 (online)10.1007/s10853-019-03627-0http://hdl.handle.net/2263/70299Please read abstract in the article.en© Springer Science+Business Media, LLC, part of Springer Nature 2019. The original publication is available at : http://link.springer.comjournal/10853.Hybrid density functional theoryHybrid functional calculationAb-initioGermanium (Ge)Electronic propertiesDefect levelsGroup III substitutionPostprint Article