Tunhuma, Shandirai MalvenAuret, Francois DanieDanga, Helga TariroNel, Jacqueline MargotDiale, M. (Mmantsae Moche)2020-03-022019-06Tunhuma, S.M., Auret, F.D., Danga, H.T. et al. In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide. Journal of Electronic Materials 48, 3849–3853 (2019). https://doi.org/10.1007/s11664-019-07145-2.0361-5235 (print)1543-186X (online)10.1007/s11664-019-07145-2http://hdl.handle.net/2263/73616Please read abstract in the article.en© 2019 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664.Native defectsLow-temperature irradiation4H-SiCDeep-level transient spectroscopy (DLTS)Silicon carbide (SiC)Postprint Article