Omotoso, EzekielMeyer, Walter ErnstAuret, Francois DanieDiale, M. (Mmantsae Moche)Ngoepe, Phuti Ngako Mahloka2016-03-112016-01Omotoso, E, Meyer, WE, Auret, FD, Diale, MM & Ngoepe, PNM 2016, 'Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences', Physica B: Condensed Matter, vol. 480, pp. 196-200.0921-4526 (print)1873-2135 (online)10.1016/j.physb.2015.08.014http://hdl.handle.net/2263/51798Irradiation experiments have been carried out on 1.9 × 1016 cm–3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 1010 to 9.2 × 1011 cm–2. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation, respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85 but the Schottky barrier height (SBHI-V) decreased from 1.47 to 1.34 eV. Free carrier concentration, Nd decreased with increasing fluence from 1.7 × 1016 to 1.1 × 1016 cm–2 at approximately 0.70 μm depth. The reduction in Nd shows that defects were induced during the irradiation and have effect on compensating the free carrier. The free carrier removal rate was estimated to be 6480±70 cm–1. Alpha-particle irradiation introduced two electron traps (E0.39 and E0.62), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively. The E0.39 as attribute related to silicon or carbon vacancy, while the E0.62 has the attribute of Z1/Z2.en© 2016 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Consensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Consensed Matter, vol. 480, pp. 196-200, 2016. doi : 10.1016/j.physb.2015.08.014.Free carrier removal rateCarrier concentration4H-SiCAlpha-particle irradiationDeep-level transient spectroscopy (DLTS)Postprint Article