Tunhuma, Shandirai MalvenDiale, M. (Mmantsae Moche)Legodi, Matshisa JohannesNel, Jacqueline MargotThabethe, Thabsile TheodoraAuret, Francois Danie2018-03-192018-01-18Tunhuma, S.M., Diale, M., Legodi, M.J. et al. 2018, 'Defects induced by solid state reactions at the tungsten-silicon carbide interface', Journal of Applied Physics, vol. 123, no. 16, pp. 161565-1-161565-7.0021-8979 (print)1089-7550 (online)10.1063/1.5011242http://hdl.handle.net/2263/64312Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally annealed in the 100–1100 C temperature range. Phase composition transitions and the associated evolution in the surface morphology were investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM). After annealing at 1100 C, the E0.08, E0.15, E0.23, E0.34, E0.35, E0.61, E0.67, and E0.82 defects were observed. Our study reveals that products of thermal reactions at the interface between tungsten and n-4H-SiC may migrate into the semiconductor, resulting in electrically active defect states in the bandgap.enPublished by AIP PublishingSolid state reactionsDeep level transient spectroscopy (DLTS)Thermal reactionsTemperature rangeElectrically active defectsDefects inducedX-ray diffraction (XRD)Wide band gap semiconductorsTungsten carbideSilicon carbide (SiC)Schottky barrier diodesScanning electron microscopy (SEM)Interface statesArticle