Hlatshwayo, Thulani ThokozaniMokgadi, Thapelo FreddySohatsky, A.Abdalla, Zaki Adam YousifSkuratov, Vladimir AlexeevichNjoroge, Eric GitauMlambo, M.2024-12-092024-12-092024-12Hlatswayo, T.T., Mokgadi, T.F., Sohatsky, A. et al. 2024, 'The migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C', Vacuum, vol. 230, art. 113676, pp. 1-9. https://DOI.org/10.1016/j.vacuum.2024.113676.0042-207X (print)1879-2715 (online)10.1016/j.vacuum.2024.113676http://hdl.handle.net/2263/99811DATA AVAILABILITY : Data will be made available on request.The study investigated the migration behaviour of Sr implanted into SiC in the presence of helium (He). Sr ions were implanted into polycrystalline SiC samples (Sr-SiC) at room temperature (RT), and co-implanted with He ions also at RT (Sr + He-SiC). The samples were then annealed isochronally at 1100 ◦C, 1200 ◦C, and 1300 ◦C for 5 h. Transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) were used to characterize both as-implanted and annealed annealed samples. Sr implantation induced amorphization of SiC, while co-implantation with He led to the formation of He nano-bubbles within the amorphous SiC matrix. During annealing, Sr migrated towards the surface, resulting in loss of Sr, cavity formation, and formation of Sr precipitates in the Sr-SiC samples. In Sr + He-SiC samples, He-induced cavities formed around the projected range of Sr, inhibiting epitaxial regrowth of SiC. As a result, the Sr distribution became concentrated around these He cavities, with Sr trapped both in front and behind them. The enhanced migration of Sr in annealed Sr + He-SiC is attributed to the slower recrystallization of the damaged SiC layer, the presence of larger He-induced cavities, and increased surface roughness. These findings provide insights into Sr migration the mechanisms in SiC, relevant for enhancing the safety of nuclear fuels.en© 2024 The Authors. This is an open access article under the CC BY-NC-ND license.Sr precipitatesCavitiesAnnealingHeliumEpitaxial regrowthSilicon carbide (SiC)Rutherford backscattering spectrometry (RBS)Transmission electron microscopy (TEM)Article