Ngoepe, Phuti Ngako MahlokaMeyer, Walter ErnstAuret, Francois DanieOmotoso, EzekielDiale, M. (Mmantsae Moche)2017-04-062017-06Ngoepe, PNM, Meyer, WE, Auret, FD, Omotoso, E & Diale, M 2017, 'DLTS characterization of defects in GaN induced by electron beam exposure', Materials Science in Semiconductor Processing, vol. 64, pp. 29-31.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2017.03.008http://hdl.handle.net/2263/59675The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and capture cross section of 8.0 × 10-16 cm2 was induced by the exposure. The defect was similar to defects induced by other irradiation techniques such as proton, electron, and gamma irradiation. In comparison to GaN, the EBE induced defects in other materials such as Si and SiC are similar to those induced by other irradiation methods.en© 2017 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 64, pp. 29-31, 2017. doi : 10.1016/j.mssp.2017.03.008.GaNDefectDeep level transient spectroscopy (DLTS)Electron beam exposure (EBE)Postprint Article