Omotoso, EzekielMeyer, Walter ErnstJanse van Rensburg, Pieter JohanIgumbor, EmmanuelTunhuma, Shandirai MalvenNgoepe, Phuti Ngako MahlokaDanga, Helga TariroAuret, Francois Danie2017-11-102017-10Omotoso, E., Meyer, W E., Janse van Rensburg, P.J. et al. 2017, 'The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 241-245.0168-583X (print)1872-9584 (online)10.1016/j.nimb.2017.05.055http://hdl.handle.net/2263/63092Please read abstract in the article.en© 2017 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 409, pp. 241-245, 2017. doi : 10.1016/j.nimb.2017.05.055.Schottky barrier diode (SBD)4H-SiCProton irradiationRichardson constantSchottky barrier height (SBH)SiliconContactsTransportDetectorsTemperaturesHeightsInhomogeneitiesI-V characteristicsAlpha-particle irradiationDouble Gaussian distributionPostprint Article