Selyshchev, PavelAkintunde, S.O. (Samuel)2016-09-092016-09-092014Selyshchev, P & Akintunde, S 2014, 'Formation of chemical compound layer at the interface of initial substances A and B with dominance of diffusion of the A atoms', International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, vol. 8, no. 6, pp. 549-551.http://hdl.handle.net/2263/56674A theoretical approach to consider formation of chemical compound layer at the interface between initial substances A and B due to the interfacial interaction and diffusion is developed. It is considered situation when speed of interfacial interaction is large enough and diffusion of A-atoms through AB-layer is much more then diffusion of B-atoms. Atoms from A-layer diffuse toward B-atoms and form AB-atoms on the surface of B-layer. B-atoms are assumed to be immobile. The growth kinetics of the AB-layer is described by two differential equations with non-linear coupling, producing a good fit to the experimental data. It is shown that growth of the thickness of the AB-layer determines by dependence of chemical reaction rate on reactants concentration. In special case the thickness of the AB-layer can grow linearly or parabolically depending on that which of processes (interaction or the diffusion) controls the growth. The thickness of AB-layer as function of time is obtained. The moment of time (transition point) at which the linear growth are changed by parabolic is found.en© 2014 World Academy of Science, Engineering and TechnologyPhase formationBinary systemsInterfacial reactionDiffusionCompound layersGrowth kineticsArticle