Tunhuma, Shandirai MalvenAuret, Francois DanieLegodi, Matshisa JohannesDiale, M. (Mmantsae Moche)2018-04-182018-07Tunhuma, S.M., Auret, F.D., Legodi, M.J. et al. 2018, 'Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC', Materials Science in Semiconductor Processing, vol. 81, pp. 122-126.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2018.03.021http://hdl.handle.net/2263/64600We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of diode thermionic emission characteristics due to the sputter deposition. Two electrically active defects E0.29 and E0.69 were introduced. Depth profiling revealed that sputter deposition increases the concentration of the native Z1 defect. A comparison with prominent irradiation and process induced defects showed that the E0.29 was unique and introduced during sputter deposition only. The E0.69 may be silicon vacancy related defect.en© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 81, pp. 122-126, 2018. doi : 10.1016/j.mssp.2018.03.021.Deep-level transient spectroscopy (DLTS)Sputter depositionIrradiationDefectsSilicon vacanciesInduced defectsEmission characteristicsElectrically active defectsElectrical characterizationCurrent voltageCapacitance voltage measurementsTungstenThermionic emissionSilicon compoundsSilicon carbideDepth profilingDepositionCapacitancePostprint Article