Igumbor, EmmanuelDongho-Nguimdo, MoiseMapasha, Refilwe EdwinKalimuthu, RajendranRaji, AbdulrafiuMeyer, Walter Ernst2024-03-062024-04Igumbor, E., Dongho-Nguimdo, M., Mapasha, E. et al. Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance. Journal of Electronic Materials 53, 1903–1912 (2024). https://doi.org/10.1007/s11664-023-10902-z.0361-5235 (print)1543-186X (online)10.1007/s11664-023-10902-zhttp://hdl.handle.net/2263/95093Please read abstract in the article.en© The Minerals, Metals & Materials Society 2024. The original publication is available at : http://link.springer.com/journal/11664.GermaniumFormation energyBinding energyDefect levelSubstitution-interstitialDefect complexesDensity functional theory (DFT)Postprint Article