Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium : implications for enhanced Ge-based devices

Igumbor, EmmanuelMapasha, Refilwe EdwinRaji, Abdulrafiu TundeOmotoso, Ezekiel2025-04-222025-04-222025-08Igumbor, E., Mapasha, E., Raji, A.T. et al. 2025, 'Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium: implications for enhanced Ge-based devices', Surface Science, vol. 758, art. 122742, pp. 1-11, doi : 10.1016/j.susc.2025.122742.0039-6028 (print)1879-2758 (online)10.1016/j.susc.2025.122742http://hdl.handle.net/2263/102174DATA AVAILABILITY : Data will be made available on request.Please read abstract in the article.en© 2025 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).Materials modelingSemiconductorElectronicDefect-complexesDefect-levelGermaniumSDG-12: Responsible consumption and productionElectrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium : implications for enhanced Ge-based devicesArticle