Venter, J.J.P. (Johannes)Sinha, SaurabhLambrechts, Wynand2019-10-072019-10-072018-11-08Johan Venter, Saurabh Sinha, Wynand Lambrechts, “Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications,” Opt. Eng. 57(11), 117104 (2018), DOI: 10.1117/1.OE.57.11.117104.0091-3286 (print)1560-2303 (online)10.1117/1.OE.57.11.117104http://hdl.handle.net/2263/71593Please read abstract in the article.en© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)Infrared radiation photodetectorsCircuit noiseDiode-connected transistorCryogenic operationHeterojunction bipolar transistor (HBT)Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applicationsArticle