Omotoso, EzekielIgumbor, EmmanuelMeyer, Walter Ernst2025-03-112025-03-112025-01Omotoso, E., Igumbor, E. & Meyer, W.E. DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. Journal of Materials Science: Materials in Electronics 36, 3 (2025). https://doi.org/10.1007/s10854-024-14060-8.0957-4522 (print)1573-482X (online)10.1007/s10854-024-14060-8http://hdl.handle.net/2263/101440DATA AVAILABILITY : The datasets generated during and/or analysed during the current study are available from the author on reasonable request.Please read abstract in the article.en© The Author(s), 2024. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License.Deep level transient spectroscopy (DLTS)Schottky barrier diodes (SBDs)Nitrogen-doped 4H-silicon carbideSwift heavy ionsElectronic devicesSDG-09: Industry, innovation and infrastructureArticle