Du Plessis, MonukoJoubert, Trudi-Heleen2016-06-212016-06-212015-08Du Plessis, M & Joubert, T-H 2015, 'Electroluminescence from two junction punch through structures in silicon nanowires', IEEE Photonics Technology Letters, vol. 27, no. 16, pp. 1741-1744.1041-113510.1109/LPT.2015.2438956http://hdl.handle.net/2263/53269Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.en© 2015 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.Silicon electroluminescenceNanowireHot carriersSilicon on insulator (SOI)Postprint Article