Taghizadeh, FatemehJanse van Rensburg, Pieter JohanOstvar, KianMeyer, Walter ErnstAuret, Francois Danie2020-06-052019-08Taghizadeh, F.,Janse van Rensburg, P.J., Ostvar, K. et al. 2019, 'Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts', Materials Science in Semiconductor Processing, vol. 99, pp. 23-27.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2019.04.012http://hdl.handle.net/2263/74882Please read abstract in the article.en© 2019 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 99, pp. 23-27, 2019. doi : 10.1016/j.mssp.2019.04.012.Schottky barrier contact (SBD)Sputter-deposition induced defects in GaAsLaplace deep-level transient spectroscopyMetastabilityTransformation kineticsNear-surface damagePostprint Article