Venter, AndreNyamhere, CloudBotha, J.R.Auret, Francois DanieJanse van Rensburg, J.P.Meyer, Walter ErnstCoelho, Sergio M.M.Kolkovsky, V.I.2012-03-132012-03-132012-03-08Venter, A, Nyamhere, C, Botha, JR, Auret, FD, Van Rensburg, PJJ, Meyer, WE, Coelho, SMM & Kolkovsky, VI 2012, 'Ar plasma induced deep levels in epitaxial n-GaAs', Journal of Applied Physics, vol. 111, no. 013703, pp. 1-4.0021-8979 (print)1089-7550 (online)10.1063/1.3673322http://hdl.handle.net/2263/18424Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a trap signature similar to irradiation induced defect E1, appears to be metastable. Ec - 0.31 eV and Ec - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.en© 2012 American Institute of PhysicsAr plasma etchingEpitaxial n-GaAsLow energy ICP etchingPlasma etchingEpitaxyArticle