Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Auret, Francois DanieCoelho, Sergio M.M.Myburg, G.Janse van Rensburg, Pieter JohanMeyer, Walter Ernst2009-11-032009-11-032009F.D.Auret,etal.,PhysicaB(2009),doi:10.1016/j.physb.2009.09.0280921-452610.1016/j.physb.2009.09.028http://hdl.handle.net/2263/11683Please read abstract in article.enElsevierAr plasma etchingDLTSAnnealingDefectsGermaniumDeep level transient spectroscopyPlasma etchingElectronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germaniumPostprint Article