Igumbor, EmmanuelOlaniyan, OkikiolaMapasha, Refilwe EdwinDanga, Helga TariroOmotoso, EzekielMeyer, Walter Ernst2018-10-012019-01Igumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2018.09.001http://hdl.handle.net/2263/66674Please read abstract in the article.en© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 89, pp. 77-84, 2019. doi : 10.1016/j.mssp.2018.09.001.Charge stateComplexesFormation energyDefectSemiconducting silicon compoundsLattice distortionsHybrid functionalHybrid density functional theoryHigh temperature electronic devicesHigh frequency (HF)Wide band gap semiconductorsSilicon carbideSemiconductor dopingHigh temperature applicationsEnergy gapDielectric propertiesDensity functional theory (DFT)Aluminum compoundsPostprint Article