Auret, Francois DanieGoodman, Stewart AlexanderLegodi, Matshisa JohannesMeyer, Walter ErnstLook, D.C.2007-08-152007-08-152002-02-25Auret, FD, Goodman, SA, Legodi, MJ, Meyer, WE, and Look, DC 2007, 'Electrical characterization of vapor phase grown single crystal ZnO', Appl. Phys. Lett., vol. 80, pp. 1340-1342.0003-695110.1063/1.1452781http://hdl.handle.net/2263/3292original file name: 02.02Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now.52903 bytesapplication/pdfen-USAmerican Institute of PhysicsDLTS (Spectroscopy)Schottky-barrier diodesDeep level transient spectroscopyDiodes, Schottky-barrierDiodes, SemiconductorArticle