Singh, NishantStander, Tinus2018-08-022018-10Singh, N. & Stander, T. E-Band Active Q-Enhanced Pseudo-combline Resonator in 130 nm SiGe BiCMOS. Journal of Infrared, Millimeter, and Terahertz Waves (2018) 39: 949-953. https://doi.org/10.1007/s10762-018-0524-0.1866-6892 (print)1866-6906 (online)10.1007/s10762-018-0524-0http://hdl.handle.net/2263/66062We present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.en© Springer Science+Business Media, LLC, part of Springer Nature 2018. The original publication is available at : https://link.springer.com/journal/10762.BiCMOS integrated circuitsHeterojunction bipolar transistorsMillimeter wave integrated circuitsQ measurementResonatorsSi-Ge alloysSingle-endedNegative resistance circuitsCombline resonatorsBismuth alloyBiCMOS technologyBipolar integrated circuitsPostprint Article