Venter, AndreMurape, D.M.Botha, J.R.Auret, Francois Danie2015-03-102015-03-102015-01Venter, A, Murape, DM, Botha, JR & Auret, FD 2015, 'Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements', Thin Solid Films, vol. 574, pp. 32-37.0040-6090 (print)1879-2731 (online)10.1016/j.tsf.2014.11.057http://hdl.handle.net/2263/43917Please read abstract in the article.en© 2014 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, vol. 574, pp.32-37, 2015. doi : 10.1016/j.tsf.2014.11.057Current–voltage measurementsTransport characteristicsBarrier heightGaussian distributionPostprint Article