Omotoso, EzekielParadzah, Alexander TaperaLegodi, Matshisa JohannesDiale, M. (Mmantsae Moche)Meyer, Walter ErnstAuret, Francois Danie2017-11-102017-10Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E. & Auret, F.D. 2017, 'Electrical characterization of electron irradiated and annealed lowly - doped 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45.0168-583X (print)1872-9584 (online)10.1016/j.nimb.2017.05.042http://hdl.handle.net/2263/63094Please read abstract in the article.en© 2017 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45, 2017. doi : 10.1016/j.nimb.2017.05.042.High energy electron (HEE)Irradiation4H-SiCSchottky contactsDeep level transient spectroscopy (DLTS)SpectroscopyDetectorsDefectsSchottky diodesDeep levelsBand gap states4H–silicon carbideAlpha-particle irradiationPostprint Article