Abdurrazaq, AbdulgaffarRaji, Abdulrafiu T.Meyer, Walter Ernst2020-03-252020-03-252020-05Abdurrazaq, A., Raji, A.T. & Meyer, W.E. 2020, 'Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon', Materials Science in Semiconductor Processing, vol. 110, art. 104967.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2020.104967http://hdl.handle.net/2263/73832Please read abstract in the article.en© 2019 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 110, art. 104967, 2020. doi : 10.1016/j.mssp.2020.104967.Density functional theory (DFT)Formation energyPassivationSiliconCharge stateDefect-complexPreprint Article