Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

Splith, DanielMuller, StefanSchmidt, FlorianVon Wenckstern, HolgerJansen van Rensburg, JohanMeyer, Walter ErnstGrundmann, Marius2014-03-072014-03-072014-01Splith, D, Muller, S, Schmidt, F, Von Wenckstern, H., Van Rensburg, JJ, Meyer, WE & Grundmann, M 2014, 'Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition', Physica Status Solidi (A) Applications and Materials Science, vol. 211, no. 1, pp. 40-47.1862-6300 (print)1862-6319 (online)10.1002/pssa.201330088http://hdl.handle.net/2263/37099Please read abstract in the article.en© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Physica Status Solidi A : Applications and Materials Science, vol. 211, no.1, pp. 40-47, 2014. doi : 10.1002/pssa.201330088 which has been published in final form at : http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319Gallium oxideHeteroepitaxySchottky barriersGallium compoundsThin filmsPulsed laser depositionSemiconductorsDetermination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser depositionPostprint Article