Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

dc.contributor.authorAhmed, Mustafa Abaas Mohamedelkhair
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorNel, Jacqueline Margot
dc.date.accessioned2019-09-04T14:32:17Z
dc.date.available2019-09-04T14:32:17Z
dc.date.issued2019-11
dc.description.abstractIn this work, Schottky diodes based on undoped and (Ce, Al) co-doped ZnO thin films have been fabricated using the sol-gel spin coating. The effect of (Ce, Al) co-doped ZnO films on the structural and optical properties has been studied, and the electrical characteristic of the fabricated Schottky diode devices are investigated. X-ray diffraction and field emission scanning electron microscopy are used to study the crystalline structure and surface morphology, respectively. Room temperature Raman spectroscopy showed that the intensity of the dominant high peak decreased after doping. The photoluminescence studies at room temperature showed that the intensity of the UV and the visible emission peak decreased after doping. UV-vis spectroscopy measurements at room temperature showed a decrease in the optical band gap after doping compared to undoped ZnO thin films. The I–V characteristics of fabricated Schottky diodes manifest good device behaviour at higher levels of doping (7.0 at.) with an ideality factor of 2.40, the barrier height of 0.77 eV and series resistance of 262 . The maximum rectification ratio was found to be nearly 105 at 7.0 at.. Moreover, the electrical properties of the Schottky diode devices analyzed with Cheung-Cheung function revealed that the Schottky diode parameters were higher compared to those obtained from the conventional thermionic emission theory. Furthermore, the free electron carrier concentration for the doped samples was found to be lower compared with undoped ZnO films.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.librarianhj2019en_ZA
dc.description.sponsorshipThe South African National Research Foundation (NRF) grant no:91550 and 111744.en_ZA
dc.description.urihttp://www.elsevier.com/locate/msspen_ZA
dc.identifier.citationAhmed, M.A.M., Meyer, W.E. & Nel, J.M. 2019, 'Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating', Materials Science in Semiconductor Processing, vol. 103, art. 104612, pp. 1-10.en_ZA
dc.identifier.issn1369-8001 (print)
dc.identifier.issn1873-4081 (online)
dc.identifier.other10.1016/j.mssp.2019.104612
dc.identifier.urihttp://hdl.handle.net/2263/71282
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2019 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 103, pp. 1-10, 2019. doi : 10.1016/j.mssp.2019.104612.en_ZA
dc.subjectZinc oxide (ZnO)en_ZA
dc.subjectSol-gelen_ZA
dc.subjectStructural propertiesen_ZA
dc.subjectOptical propertiesen_ZA
dc.subjectElectrical propertiesen_ZA
dc.titleEffect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coatingen_ZA
dc.typePreprint Articleen_ZA

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