Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure
| dc.contributor.author | Nyamhereme, C. | |
| dc.contributor.author | Venter, Andre | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Coelho, Sergio M.M. | |
| dc.contributor.author | Murape, D.M. | |
| dc.date.accessioned | 2012-05-23T10:17:35Z | |
| dc.date.available | 2012-05-23T10:17:35Z | |
| dc.date.issued | 2012-02-29 | |
| dc.description.abstract | Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 1014 cm 3 and 2.5 1015 cm 3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction of a single prominent defect level at EC 0.31 eV. Exposing similar samples to He plasmas introduced the same electron trap. The trap concentration increased linearly with dopant concentration suggesting that Sb may be a component of this plasma-induced trap. Thermal annealing kinetics studies suggested that this defect anneals out by diffusion. | en |
| dc.description.librarian | nf2012 | en |
| dc.description.uri | http://jap.aip.org/ | en_US |
| dc.identifier.citation | Nyamhere, C, Venter, A, Auret, FD, Coelho, SMM & Murape, DM 2012, 'Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure', Journal of Applied Physics, vol. 111, no. 4, pp. 044511-1 - 044511-2. | en |
| dc.identifier.issn | 0021-8979 (print) | |
| dc.identifier.issn | 1089-7550 (online) | |
| dc.identifier.other | 10.1063/1.3687426 | |
| dc.identifier.uri | http://hdl.handle.net/2263/18857 | |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics | en_US |
| dc.rights | © 2012 American Institute of Physics | en_US |
| dc.subject | E(0.31) defect | en |
| dc.subject | He plasma exposure | en |
| dc.title | Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure | en |
| dc.type | Article | en |