A study of amorphization energies in silicon for different implantation parameters

dc.contributor.authorFriedland, Erich Karl Helmuth
dc.contributor.emailerich.friedland@up.ac.zaen
dc.date.accessioned2007-07-30T06:16:31Z
dc.date.available2007-07-30T06:16:31Z
dc.date.issued2007-03
dc.description.abstractPlease open article to read abstracten
dc.description.sponsorshipThe author would like to thank Prof. Werner Wesch and his group at the Friedrich-Schiller-Universität Jena for the carbon and argon implantations.en
dc.format.extent366516 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationFriedland, E 2007, ‘A study of amorphization energies in silicon for different implantation parameters’, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 256, issue 1, pp. 193-198 [http://www.sciencedirect.com/science/journal/0168583X]en
dc.identifier.issn0168-583X
dc.identifier.other10.1016/j.nimb.2006.12.002
dc.identifier.urihttp://hdl.handle.net/2263/3188
dc.language.isoenen
dc.publisherElsevieren
dc.rightsElsevieren
dc.subjectAmorphizationen
dc.subjectDamage profilesen
dc.subject.lcshIon implantationen
dc.subject.lcshSiliconen
dc.subject.lcshChanneling (Physics)en
dc.titleA study of amorphization energies in silicon for different implantation parametersen
dc.typePostprint Articleen

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