A study of amorphization energies in silicon for different implantation parameters
dc.contributor.author | Friedland, Erich Karl Helmuth | |
dc.contributor.email | erich.friedland@up.ac.za | en |
dc.date.accessioned | 2007-07-30T06:16:31Z | |
dc.date.available | 2007-07-30T06:16:31Z | |
dc.date.issued | 2007-03 | |
dc.description.abstract | Please open article to read abstract | en |
dc.description.sponsorship | The author would like to thank Prof. Werner Wesch and his group at the Friedrich-Schiller-Universität Jena for the carbon and argon implantations. | en |
dc.format.extent | 366516 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.citation | Friedland, E 2007, ‘A study of amorphization energies in silicon for different implantation parameters’, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 256, issue 1, pp. 193-198 [http://www.sciencedirect.com/science/journal/0168583X] | en |
dc.identifier.issn | 0168-583X | |
dc.identifier.other | 10.1016/j.nimb.2006.12.002 | |
dc.identifier.uri | http://hdl.handle.net/2263/3188 | |
dc.language.iso | en | en |
dc.publisher | Elsevier | en |
dc.rights | Elsevier | en |
dc.subject | Amorphization | en |
dc.subject | Damage profiles | en |
dc.subject.lcsh | Ion implantation | en |
dc.subject.lcsh | Silicon | en |
dc.subject.lcsh | Channeling (Physics) | en |
dc.title | A study of amorphization energies in silicon for different implantation parameters | en |
dc.type | Postprint Article | en |