Controlling the migration of implanted cesium in silicon carbide using zirconium nanolayer

dc.contributor.authorAbdelbagi, Hesham Abdelbagi Ali
dc.contributor.authorMtshali, Christopher B.
dc.contributor.authorHossain, M.K.
dc.contributor.authorRonning, C.
dc.contributor.authorJafer, Tasabeeh A.O.
dc.contributor.authorIsmail, Mahjoub Yagoub Abdalla
dc.contributor.authorAbdalla, Zaki Adam Yousif
dc.contributor.authorMalherbe, Johan B.
dc.contributor.authorEl-Said, A.S.
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.authorNtshangase, S.S.
dc.date.accessioned2026-02-19T07:35:25Z
dc.date.issued2025-12
dc.descriptionDATA AVAILABILITY : Data will be made available on request.
dc.description.abstractPlease read abstract in the article.
dc.description.departmentPhysics
dc.description.embargo2026-08-13
dc.description.librarianhj2026
dc.description.sdgSDG-07: Affordable and clean energy
dc.description.sdgSDG-12: Responsible consumption and production
dc.description.sponsorshipFinancial support received from the TWAS-IsDB postdoctoral fellowship programme, University of Zululand and the National Research Foundation (NRF) of South Africa.
dc.description.urihttp://www.elsevier.com/locate/apsusc
dc.identifier.citationAbdelbagi, H.A.A., Mtshali, C.B., Hossain, M.K. et al. 2025, 'Controlling the migration of implanted cesium in silicon carbide using zirconium nanolayer', Applied Surface Science, vol. 713, art. 164332, pp. 1-8, doi : 10.1016/j.apsusc.2025.164332.
dc.identifier.issn0169-4332 (print)
dc.identifier.issn1873-5584 (online)
dc.identifier.other10.1016/j.apsusc.2025.164332
dc.identifier.urihttp://hdl.handle.net/2263/108443
dc.language.isoen
dc.publisherElsevier
dc.rights© 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies. Notice : this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Applied Surface Science, vol. 713, art. 164332, pp. 1-8, doi : 10.1016/j.apsusc.2025.164332.
dc.subjectSilicon carbide (SiC)
dc.subjectZirconium
dc.subjectNuclear fuel
dc.subjectCesium
dc.subjectRecrystallization
dc.titleControlling the migration of implanted cesium in silicon carbide using zirconium nanolayer
dc.typePostprint Article

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