Characterisation of Cs ion implanted GaN by DLTS
| dc.contributor.author | Ngoepe, Phuti Ngako Mahloka | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.contributor.author | Hlatshwayo, Thulani Thokozani | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.email | phuti.ngoepe@up.ac.za | en_ZA |
| dc.date.accessioned | 2019-01-24T11:37:40Z | |
| dc.date.issued | 2018-04 | |
| dc.description.abstract | Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10–11 cm−2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10–15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.embargo | 2019-04-15 | |
| dc.description.librarian | hj2019 | en_ZA |
| dc.description.sponsorship | The National Research Foundation of South Africa (Grant No. 98961). | en_ZA |
| dc.description.uri | http://www.elsevier.com/locate/physb | en_ZA |
| dc.identifier.citation | Ngoepe, P.N.M., Meyer, W.E., Auret, F.D. et al. 2018, 'Characterisation of Cs ion implanted GaN by DLTS', Physica B : Condensed Matter, vol. 535, pp. 96-98. | en_ZA |
| dc.identifier.issn | 0921-4526 (print) | |
| dc.identifier.issn | 1873-2135 (online) | |
| dc.identifier.other | 10.1016/j.physb.2017.06.064 | |
| dc.identifier.uri | http://hdl.handle.net/2263/68234 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Elsevier | en_ZA |
| dc.rights | © 2017 Published by Elsevier B.V. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 535, pp. 96-98, 2018. doi : 10.1016/j.physb.2017.06.064. | en_ZA |
| dc.subject | Deep level transient spectroscopy (DLTS) | en_ZA |
| dc.subject | Hydride vapour phase epitaxy (HVPE) | en_ZA |
| dc.subject | Gallium nitride (GaN) | en_ZA |
| dc.subject | Defect | en_ZA |
| dc.subject | Cs implantation | en_ZA |
| dc.title | Characterisation of Cs ion implanted GaN by DLTS | en_ZA |
| dc.type | Postprint Article | en_ZA |