In-situ RBS studies of strontium implanted glassy carbon

Abstract

The diffusion behaviour of strontium in glassy carbon was investigated using in-situ real time Rutherford backscattering spectrometry. The sample was annealed in vacuum from room temperature to 650 oC. Diffusion of the implanted strontium towards the bulk was observed after annealing at temperatures ranging from 450 oC – 560 oC. The diffusion depth was limited to the end-of-ion-range region where there were still some radiation damage present.No diffusion into the pristine glassy carbon was observed suggestion that diffusion of Sr in glassy carbon can only occur in regions with radiation damage. Annealing the sample at higher temperatures higher than 560 oC resulted in migration of the implanted strontium towards the surface of the glassy carbon substrate. The amount of the accumulated strontium at the surface increased as the annealing temperature is increased. The RBS spectra obtained after annealing the sample isothermally at 650 oC for 2 hours show that there was no further diffusion and accumulation of the strontium during this period.