An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors
| dc.contributor.author | Allan, Lynet | |
| dc.contributor.author | Mulwa, Winfred M. | |
| dc.contributor.author | Mwabora, Julius M. | |
| dc.contributor.author | Musembi, Robinson J. | |
| dc.contributor.author | Mapasha, Refilwe Edwin | |
| dc.date.accessioned | 2023-10-16T13:21:54Z | |
| dc.date.available | 2023-10-16T13:21:54Z | |
| dc.date.issued | 2023-08 | |
| dc.description | DATA AVAILABILITY STATEMENT : Data will be made available on request. | en_US |
| dc.description.abstract | Please read abstract in article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.sponsorship | Applied Sciences, Engineering, and Technology (PASET); The Centre for High Performance Computing (CHPC); University of Pretoria. | en_US |
| dc.description.uri | https://www.cell.com/heliyon/home | en_US |
| dc.identifier.citation | Allan, L., Mulwa, W.M., Mwabora, J.M. et al. 2023, 'An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors'. Heliyon, vol. 9, no. 8, art. e18531, doi : 10.1016/j.heliyon.2023.e18531. | en_US |
| dc.identifier.issn | 2405-8440 (online) | |
| dc.identifier.other | 10.1016/j.heliyon.2023.e18531 | |
| dc.identifier.uri | http://hdl.handle.net/2263/92904 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license. | en_US |
| dc.subject | First principles | en_US |
| dc.subject | Electronic | en_US |
| dc.subject | Mechanical | en_US |
| dc.subject | Optical and thermoelectric properties | en_US |
| dc.subject | Half-Heusler alloys | en_US |
| dc.subject | ZrCoY (Y = Sb and Bi) | en_US |
| dc.title | An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors | en_US |
| dc.type | Article | en_US |