Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
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Date
Authors
Nyamhere, Cloud
Deenapanray, P.N.K.
Auret, Francois Danie
Farlow, F.C.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
Description
Keywords
Gallium doping, Czochralski Si, Defects, Laplace DLTS
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Citation
Nyamhere, C, Deenapanray, PNK, Auret, FD & Farlow, FC 2006. ‘Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS’, Physica B: Condensed Matter, vols. 376-377, pp. 161-164 [http://www.sciencedirect.com/science/journal/09214526 ]