Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

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Authors

Nyamhere, Cloud
Deenapanray, P.N.K.
Auret, Francois Danie
Farlow, F.C.

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Elsevier

Abstract

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

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Keywords

Gallium doping, Czochralski Si, Defects, Laplace DLTS

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Citation

Nyamhere, C, Deenapanray, PNK, Auret, FD & Farlow, FC 2006. ‘Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS’, Physica B: Condensed Matter, vols. 376-377, pp. 161-164 [http://www.sciencedirect.com/science/journal/09214526 ]