First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon
dc.contributor.author | Abdurrazaq, Abdulgaffar | |
dc.contributor.author | Raji, Abdulrafiu T. | |
dc.contributor.author | Meyer, Walter Ernst | |
dc.contributor.email | a.abdurraza@up.ac.za | en_ZA |
dc.date.accessioned | 2020-03-25T12:14:57Z | |
dc.date.issued | 2020-11 | |
dc.description.abstract | Please read abstract in the article. | en_ZA |
dc.description.department | Physics | en_ZA |
dc.description.embargo | 2021-07-16 | |
dc.description.librarian | hj2020 | en_ZA |
dc.description.sponsorship | The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). | en_ZA |
dc.description.uri | https://www.springer.com/journal/12633 | en_ZA |
dc.identifier.citation | Abdurrazaq, A., Raji, A.T. & Meyer, W.E. First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon. Silicon 12, 2699–2704 (2020). https://doi.org/10.1007/s12633-019-00367-3. | en_ZA |
dc.identifier.issn | 1876-990X (print) | |
dc.identifier.issn | 1876-9918 (online) | |
dc.identifier.other | 10.1007/s12633-019-00367-3 | |
dc.identifier.uri | http://hdl.handle.net/2263/73833 | |
dc.language.iso | en | en_ZA |
dc.publisher | Springer | en_ZA |
dc.rights | © Springer Nature B.V. 2020. The original publication is available at http://link.springer.com/journal/12633. | en_ZA |
dc.subject | Formation energy | en_ZA |
dc.subject | Defect complexes | en_ZA |
dc.subject | Charge states | en_ZA |
dc.subject | Binding energy | en_ZA |
dc.subject | Defect level | en_ZA |
dc.title | First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon | en_ZA |
dc.type | Postprint Article | en_ZA |
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