First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon

dc.contributor.authorAbdurrazaq, Abdulgaffar
dc.contributor.authorRaji, Abdulrafiu T.
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.emaila.abdurraza@up.ac.zaen_ZA
dc.date.accessioned2020-03-25T12:14:57Z
dc.date.issued2020-11
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2021-07-16
dc.description.librarianhj2020en_ZA
dc.description.sponsorshipThe National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).en_ZA
dc.description.urihttps://www.springer.com/journal/12633en_ZA
dc.identifier.citationAbdurrazaq, A., Raji, A.T. & Meyer, W.E. First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon. Silicon 12, 2699–2704 (2020). https://doi.org/10.1007/s12633-019-00367-3.en_ZA
dc.identifier.issn1876-990X (print)
dc.identifier.issn1876-9918 (online)
dc.identifier.other10.1007/s12633-019-00367-3
dc.identifier.urihttp://hdl.handle.net/2263/73833
dc.language.isoenen_ZA
dc.publisherSpringeren_ZA
dc.rights© Springer Nature B.V. 2020. The original publication is available at http://link.springer.com/journal/12633.en_ZA
dc.subjectFormation energyen_ZA
dc.subjectDefect complexesen_ZA
dc.subjectCharge statesen_ZA
dc.subjectBinding energyen_ZA
dc.subjectDefect levelen_ZA
dc.titleFirst-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in siliconen_ZA
dc.typePostprint Articleen_ZA

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